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Setp doping Profile을 잦는 Ion Implanted Depletion-type Igfet의 I-V특성에 관한연구 = A study on the I-V characteristics of Ion-Implanted depletion-ty
Setp doping Profile을 잦는 Ion Implanted Depletion-type Igfet의 I-V특성에 관한연구 = A stu...
Setp doping Profile을 잦는 Ion Implanted Depletion-type Igfet의 I-V특성에 관한연구 = A study on the I-V characteristics of Ion-Implanted depletion-ty

Detailed Information

Material Type  
 학위논문
Date and Time of Latest Transaction  
19990414134204
KDC  
569
Callnumber  
569 박15ㅅ
Author  
박공희
Title/Author  
Setp doping Profile을 잦는 Ion Implanted Depletion-type Igfet의 I-V특성에 관한연구 = A study on the I-V characteristics of Ion-Implanted depletion-type IGFET having the step doping profile / 朴孔熙
Publish Info  
서울 : 韓陽大學 大學院, 1985
Material Info  
30p. ; 26cm
학위논문주기  
학위논문(석사) - 漢陽大學 大學院 : 電子工學科, 1985
Index Term-Uncontrolled  
SETP DOPING PROFILE ION IMPLANTED DEPLETIONTYPE IGFET IV특성 STUDY IV CHARACTERISTICS IONIMPLANTED DEPLETIONTYPE IGFET HAVING STEP DOPING PROFILE
Price Info  
\-기증
Control Number  
kpcl:13771

MARC

 0081985                                                KOR
■00519990414134204
■056    ▼a569
■090    ▼a569▼b박15ㅅ
■1001  ▼a박공희
■24510▼aSetp  doping  Profile을  잦는  Ion  Implanted  Depletion-type  Igfet의  I-V특성에  관한연구▼xA  study  on  the  I-V  characteristics  of  Ion-Implanted  depletion-type  IGFET  having  the  step  doping  profile▼d朴孔熙
■260    ▼a서울▼b韓陽大學  大學院▼c1985
■300    ▼a30p.▼c26cm
■5020  ▼a학위논문(석사)▼b漢陽大學  大學院▼c電子工學科▼d1985
■653    ▼aSETP▼aDOPING▼aPROFILE▼a잦▼aION▼aIMPLANTED▼aDEPLETIONTYPE▼aIGFET▼aIV특성▼aSTUDY▼aIV▼aCHARACTERISTICS▼aIONIMPLANTED▼aDEPLETIONTYPE▼aIGFET▼aHAVING▼aSTEP▼aDOPING▼aPROFILE
■9500  ▼b\▼c기증

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