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Setp doping Profile을 잦는 Ion Implanted Depletion-type Igfet의 I-V특성에 관한연구 = A study on the I-V characteristics of Ion-Implanted depletion-ty
Setp doping Profile을 잦는 Ion Implanted Depletion-type Igfet의 I-V특성에 관한연구 = A study on the I-V characteristics of Ion-Implanted depletion-ty
- Material Type
- 학위논문
- Date and Time of Latest Transaction
- 19990414134204
- KDC
- 569
- Callnumber
- 569 박15ㅅ
- Author
- 박공희
- Title/Author
- Setp doping Profile을 잦는 Ion Implanted Depletion-type Igfet의 I-V특성에 관한연구 = A study on the I-V characteristics of Ion-Implanted depletion-type IGFET having the step doping profile / 朴孔熙
- Publish Info
- 서울 : 韓陽大學 大學院, 1985
- Material Info
- 30p. ; 26cm
- 학위논문주기
- 학위논문(석사) - 漢陽大學 大學院 : 電子工學科, 1985
- Index Term-Uncontrolled
- SETP DOPING PROFILE 잦 ION IMPLANTED DEPLETIONTYPE IGFET IV특성 STUDY IV CHARACTERISTICS IONIMPLANTED DEPLETIONTYPE IGFET HAVING STEP DOPING PROFILE
- Price Info
- \-기증
- Control Number
- kpcl:13771